Physics |
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2006, No. 2
E.G. Abramochkin, E.V. Razueva, V.G.Volostnikov
LGENERALIZED GAUSSIAN BEAMS AND ITS TRANSFORMATION IN ASTIGMATIC OPTICAL SYSTEMS
A transformation of a higher Gaussian beam in general astigmatic optical systems is described in terms of rotations in 3D space. This way is simpler than the direct Fourier integral evaluation and preferable for numerical simulations. The two examples of optical systems and corresponding transformations, connecting with mode converter and fractional Fourier transform, are discussed.
E.K. Bashkirov
The exact solution for collective model of two identical two-level atoms interacting with two-mode quantum electromagnetic field in lossless cavity through the nondegenerate two-photon transition is studied assuming the field to be initially in the coherent state and both atoms to be in the excited states. On the basis of the exact solution the time evolution of the atomic probabilities, mean photon numbers in modes, field statistics and squeezing, linear atomic entropy and entanglement between atoms and field are studied.
A.M. Guryanov, A.V. Pashin, N.V. Latukhina, V.M. Lebedev
COMPONENTS DISTRIBUTION IN SILICON MIS STRUCTURES WITH RARE EARTH METAL OXIDE FILMS
Using the Rutherford backward scattering spectrometry method and nuclear reaction analysis the elemental composition and the concentration depth profiles of components in silicon MIS structures with the one- and two-layered rare earth metal oxide films as insulator are studied. Strong phase boundaries in this MIS structures are found. The elemental composition one-layered dielectric films of dysprosium, gadolinium, yttrium, erbium, holmium and scandium oxide and two-layered scandium oxide — erbium oxide and scandium oxide — holmium oxide is determined. The elemental composition of this films is Similar to stoichiometric composition.
A.A. Kolesnikova, A.N. Komov
A modification of contact area pattern with radial geometry has been proposed which has certain advantages when performing specific resistance measurements of ohmic contacts fabricated on epitaxial layers. Applications of this pattern are considered for TLM methods. Results obtained are used in studying specific resistance of Ni-based ohmic contacts to epitaxial layers of SiC.