Physics

2005, No. 2

E.K. Bashkirov, M.S. Rusakova

TIME EVOLUTION OF A TWO-LEVEL ATOM WITH MULTIPHOTON TRANSITIONS IN A DETUNED FINITE-Q CAVITY

In the paper the dynamics of a two-level atom interacting with quantum electromagnetic field by multiphoton transitions is considered. The analytic expressions for mean photon number and atomic populations are obtained on the basis of master equation solution for initial vacuum field state. Computer modeling for system observables evolution is carried out for various model parameter values and coherent initial field state. The possibility of superpoisson field mode statistics existence is revealed.

O.T. Danilova

PROCESSING WASTES WITH METAL INCLUSION BY MEANS OF HF-DISCHARGE

In the present paper an applied problem of plazma utilization and regeneration of water conditioning system wastes with metal inclusion is discussed. The results of our study show that thermodynamics accounts and experimental data qualitatively correspond each other.

A.P. Martynenko

ТЕОРИЯ ТОНКОЙ СТРУКТУРЫ СПЕКТРА ЭНЕРГИИ АТОМА МЮОННОГО ВОДОРОДА

The corrections of orders α³, α⁴ and α⁵ to the Lamb shift of 1S and 2S states in muonic hydrogen (μp) and muonic deuterium (μd)are calculated. The nuclear structure effects are taken into account in terms of the proton r_p and deuteron r_d charge radii for 1? interaction and by means of the nucleus electromagnetic form factors in the case of one loop amplitudes. The obtained numerical value of the isotope shift (μd)–(μp) for the splitting (1S ÷ 2S ) 101003.3495meV can be considered as a proper estimation for the future experiment with the accuracy 10^-6. The fine structure intervals E(1S)–8E(2S) in muonic hydrogen and deuterium are calculated.

V.A. Rozhkov, M.A. Rodionov, A.M. Guryanov, A.V.Pashin

ANTIREFLECTION PROPERTIES OF HOLMIUM OXIDE AND SCANDIUM OXIDE FILMS

The spectral dependence of the transmission factor of a holmium and scandium oxide films and the antireflection effect of a silicon photoelectric transducer covered by these films were studied in this research. The investigations have shown that the deposition of holmium and scandium oxide films on the silicon surface decreases the spectral light reflection index from the surface of silicon down to 1–4.5% and increases the spectral value of shot-circuit photocurrent in a silicon photoelectric transducer more than by 55%.