Physics

2004, The Second Special Issue

A.N. Komov, V.I. Tchepurnov, V.M. Treschov, G.P. Yarovoy

THERMOPOWER ON HETEROSTRUCTURE SILICON CARBIDE ON SILICON SUBSTRATE IN MICROWAVE REGION

In this paper the analysis of a stray effect on Hall-sensor's efficiency signal sensuality is given, - it is thermopower. The Hall-effect sensor is a silicon carbide thin-film element on silicon substrate. The curves of SiC-sensors at 40GHz wave are studied and results of measurements and their analysis are discussed. It is shown, that thermopower does not affect outcome value of the Hall voltage; error is lower then scaling measurements. The microwave power sensor consisted of the Hall-sensor and waveguide package excludes rectifying junction of metal-semiconductors. The results may be used for study of SiC/Si heterostructure properties at microwave range.

V.A. Rozhkov, M.A. Rodionov

ELECTROPHYSICAL PROPERTIES OF METAL-ERBIUM OXIDE-SILICON STRUCTURES

The electrical properties of aluminum-erbium oxide-silicon (Al-Er₂O₃-Si) structures are studied. The conductivity of these metal-insulator-semiconductor (MIS) structures is satisfactorily described by the Poole-Frenkel mechanism. The density of surface states determined by the method of capacitance-voltage characteristics is 7,5•10¹¹ cm^-2. The kinetics curves of the capacitance are investigated. The surface generation rate and lifetime of the minority charge carriers, determined by using the Zerbst method, are within 380-400 cm •s^-1 and 0.1-0.3 μs, respectively. The structures studied are promising materials for MIS varactors with a high capacity variation coefficient.

V.A. Rozhkov, M.A. Rodionov

ENERGY BARRIERS ON THE INTERPHASE BOUNDARIES IN A MIS-SYSTEM

The electrical properties of aluminum-erbium oxide-silicon (Al-Er₂O₃-Si) structures are studied. The conductivity of these metal-insulator-semiconductor (MIS) structures is satisfactorily described by the Poole-Frenkel mechanism. The density of surface states determined by the method of capacitance-voltage characteristics is 7,5•10¹¹ cm^-2. The kinetics curves of the capacitance are investigated. The surface generation rate and lifetime of the minority charge carriers, determined by using the Zerbst method, are within 380-400 cm•s^-1 and 0.1-0.3 μs, respectively. The structures studied are promising materials for MIS varactors with a high capacity variation coefficient.